ChE 115. Electronic Materials Processing. 9 units (3-0-6); third term. Prerequisites: ChE 63 ab, ChE 103 abc, ChE 101, or instructor's permission. Introduction into the gas-phase processing techniques used in the fabrication of electronic materials and devices. Kinetic theory of gases. Surface chemistry and gas-surface interaction dynamics. Film deposition techniques: physical and chemical vapor deposition, atomic layer epitaxy, liquid-phase epitaxy, molecular beam epitaxy. Introduction into plasmas and their role in patterned etching and layer deposition. Charging damage during plasma processing. Determination of key parameters that control the ion energy and flux to the wafer surface. Instructor: Giapis.